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Jiandong Meng
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Journal Articles

Optimization of Gallium Nitride Metalorganic Chemical Vapor Deposition Process

Pradeep George, Jiandong Meng, Yogesh Jaluria
Journal: ASME Journal of Heat and Mass Transfer
Publisher: ASME
Article Type: Research-Article
J. Heat Mass Transfer. June 2015, 137(6): 061007.
Paper No: HT-14-1171
https://doi.org/10.1115/1.4029859
Published Online: June 1, 2015
View Article titled, Optimization of Gallium Nitride Metalorganic Chemical Vapor Deposition Process
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Topics: Design, Engineering simulation, Gallium nitride, Optimization, Simulation, Metalorganic chemical vapor deposition, Modeling, Computational fluid dynamics, Response surface methodology
Proceedings Papers

Transient Behavior of the Gallium Nitride Chemical Vapor Deposition Process

Jiandong Meng, Yogesh Jaluria
Proc. ASME. IMECE2013, Volume 8C: Heat Transfer and Thermal Engineering, V08CT09A074, November 15–21, 2013
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2013-63236
https://doi.org/10.1115/IMECE2013-63236
View Paper titled, Transient Behavior of the Gallium Nitride Chemical Vapor Deposition Process
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Topics: Chemical vapor deposition, Gallium nitride, Transients (Dynamics), Metalorganic chemical vapor deposition, Chemical reactions, Fluid dynamics, Heat, Mass transfer, Steady state, Temperature
Proceedings Papers

Thermal Transport in the Gallium Nitride Chemical Vapor Deposition Process

Jiandong Meng, Yogesh Jaluria
Proc. ASME. HT2013, Volume 3: Gas Turbine Heat Transfer; Transport Phenomena in Materials Processing and Manufacturing; Heat Transfer in Electronic Equipment; Symposium in Honor of Professor Richard Goldstein; Symposium in Honor of Prof. Spalding; Symposium in Honor of Prof. Arthur E. Bergles, V003T09A003, July 14–19, 2013
Publisher: American Society of Mechanical Engineers
Paper No: HT2013-17081
https://doi.org/10.1115/HT2013-17081
View Paper titled, Thermal Transport in the Gallium Nitride Chemical Vapor Deposition Process
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Topics: Chemical vapor deposition, Gallium nitride, Design, Metalorganic chemical vapor deposition, Rotating disks, Thin films, Buoyancy, Chemical reactions, Optimization, Simulation
Journal Articles

Numerical Simulation of GaN Growth in a Metalorganic Chemical Vapor Deposition Process

Jiandong Meng, Yogesh Jaluria
Journal: Journal of Manufacturing Science and Engineering
Publisher: ASME
Article Type: Research-Article
J. Manuf. Sci. Eng. December 2013, 135(6): 061013.
Paper No: MANU-13-1160
https://doi.org/10.1115/1.4025781
Published Online: November 18, 2013
View Article titled, Numerical Simulation of GaN Growth in a Metalorganic Chemical Vapor Deposition Process
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Topics: Gallium nitride, Metalorganic chemical vapor deposition, Temperature, Computer simulation, Pressure, Flow (Dynamics)
Proceedings Papers

Numerical Simulation of GaN Growth in a MOCVD Process

Jiandong Meng, Yogesh Jaluria
Proc. ASME. IMECE2011, Volume 11: Nano and Micro Materials, Devices and Systems; Microsystems Integration, 205-212, November 11–17, 2011
Publisher: American Society of Mechanical Engineers
Paper No: IMECE2011-63040
https://doi.org/10.1115/IMECE2011-63040
View Paper titled, Numerical Simulation of GaN Growth in a MOCVD Process
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Topics: Computer simulation, Gallium nitride, Metalorganic chemical vapor deposition, Computational fluid dynamics, Temperature, Chemical kinetics, Computer software, Flow (Dynamics), Hydrogen, Optimization