This paper investigates the simulation, response surface modeling, and optimization of the metalorganic chemical vapor deposition (MOCVD) process for the deposition of gallium nitride (GaN). Trimethylgallium (TMGa) and ammonia (NH3) are the precursors carried by hydrogen into the rotating-disk reactor. The deposition rate of GaN film and its uniformity form the focus of this study. Computational fluid dynamics (CFD) model simulates the deposition of the GaN film. CFD model is employed to identify two design variables, inlet velocity and inlet precursor concentration ratio, which significantly affect the deposition rate and uniformity of GaN film. Compromise response surface method (CRSM) is used to generate response surfaces for average deposition rate and uniformity. These response surfaces are used to generate the Pareto front for the conflicting objectives of optimal rate of average deposition and uniformity. Pareto front captures the trade-off between deposition rate and uniformity of the GaN film. It is observed that for the whole range of design variables, there are numerous options to get stable uniformity levels than deposition rate. The optimal inlet velocity and precursor concentration for different objective functions considered tend to be near the upper bounds.
Issue Section:
Research Papers
References
1.
Ohring
, M.
, 2001
, Materials Science of Thin Films
, Academic Press
, Waltham, MA
.2.
Breiland
, W. G.
, and Coltrin
, M. E.
, 1990
, “Si Deposition Rates in a Two-Dimensional CVD Reactor and Comparisons With Model Calculations
,” J. Electrochem. Soc.
, 137
(7
), pp. 2313
–2319
.10.1149/1.20869333.
Gardeniers
, J.
, Maas
, W.
, Van Meerten
, R.
, and Giling
, L.
, 1989
, “Influence of Temperature on the Crystal Habit of Silicon in the Si–H–Cl CVD System I. Experimental Results
,” J. Cryst. Growth
, 96
(4
), pp. 821
–831
.10.1016/0022-0248(89)90642-84.
Amano
, H.
, Kito
, M.
, Hiramatsu
, K.
, and Akasaki
, I.
, 1989
, “P-Type Conduction in Mg-Doped GaN Treated With Low-Energy Electron Beam Irradiation (LEEBI)
,” Jpn. J. Appl. Phys
, 28
(12
), pp. L2112
–L2114
.10.1143/JJAP.28.L21125.
Cheng
, H.-E.
, Chiang
, M.-J.
, and Hon
, M.-H.
, 1995
, “Growth Characteristics and Properties of TiN Coating by Chemical Vapor Deposition
,” J. Electrochem. Soc.
, 142
(5
), pp. 1573
–1578
.10.1149/1.20486156.
Hintermann
, H.
, 1996
, “Advances and Development in CVD Technology
,” Mater. Sci. Eng. A
, 209
(1
), pp. 366
–371
.10.1016/0921-5093(95)10131-47.
Gladfelter
, W. L.
, 1993
, “Selective Metalization by Chemical Vapor Deposition
,” Chem. Mater.
, 5
(10
), pp. 1372
–1388
.10.1021/cm00034a0048.
Creighton
, J. R.
, and Parmeter
, J. E.
, 1993
, “Metal CVD for Microelectronic Applications: An Examination of Surface Chemistry and Kinetics
,” Crit. Rev. Solid State Mater. Sci.
, 18
(2
), pp. 175
–237
.10.1080/104084393082425609.
Evans
, G.
, and Greif
, R.
, 1987
, “Numerical Model of the Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor
,” ASME J. Heat Transfer
, 109
(4
), pp. 928
–935
.10.1115/1.324820510.
Dimitrios
, I.
, Kremer
, A. M.
, McKenna
, D. R.
, and Jensen
, K. F.
, 1987
, “Complex Flow Phenomena in Vertical MOCVD Reactors: Effects on Deposition Uniformity and Interface Abruptness
,” J. Cryst. Growth
, 85
(1–2
), pp. 154
–164
.10.1016/0022-0248(87)90217-X 11.
Fotiadis
, D. I.
, Boekholt
, M.
, Jensen
, K. F.
, and Richter
, W.
, 1990
, “Flow and Heat Transfer in CVD Reactors: Comparison of Raman Temperature Measurements and Finite Element Model Predictions
,” J. Cryst. Growth
, 100
(3
), pp. 577
–599
.10.1016/0022-0248(90)90257-L12.
Jensen
, K. F.
, Einset
, E. O.
, and Fotiadis
, D. I.
, 1991
, “Flow Phenomena in Chemical Vapor Deposition of Thin Films
,” Ann. Rev. Fluid Mech.
, 23
(1
), pp. 197
–232
.10.1146/annurev.fl.23.010191.00121313.
Karki
, K. C.
, Sathyamurthy
, P. S.
, and Patankar
, S. V.
, 1993
, “Laminar Flow Over a Confined Heated Disk: Effect of Buoyancy and Rotation
,” Advanced Computations in Materials Processing, ASME, New York, pp. 73–81.14.
Moffat
, H.
, and Jensen
, K. F.
, 1986
, “Complex Flow Phenomena in MOCVD Reactors: I. Horizontal Reactors
,” J. Cryst. Growth
, 77
(1
), pp. 108
–119
.10.1016/0022-0248(86)90290-315.
Ouazzani
, J.
, and Rosenberger
, F.
, 1990
, “Three-Dimensional Modelling of Horizontal Chemical Vapor Deposition: I. MOCVD at Atmospheric Pressure
,” J. Cryst. Growth
, 100
(3
), pp. 545
–576
.10.1016/0022-0248(90)90256-K16.
Karki
, K.
, Sathyamurthy
, P.
, and Patankar
, S.
, 1993
, “Three-Dimensional Mixed Convection in a Horizontal Chemical Vapor Deposition Reactor
,” ASME J. Heat Transfer
, 115
(3
), pp. 803
–806
.10.1115/1.291076017.
Visser
, E.
, Kleijn
, C.
, Govers
, C.
, Hoogendoorn
, C.
, and Giling
, L.
, 1989
, “Return Flows in Horizontal MOCVD Reactors Studied With the Use of TiO2 Particle Injection and Numerical Calculations
,” J. Cryst. Growth
, 94
(4
), pp. 929
–946
.10.1016/0022-0248(89)90127-918.
Mahajan
, R. L.
, 1996
, “Transport Phenomena in Chemical Vapor-Deposition Systems
,” Adv. Heat Transfer
, 28
, pp. 339
–425
.10.1016/S0065-2717(08)70143-619.
Kee
, R. J.
, Ting
, A.
, and Spence
, P. A.
, 1994
, “Understanding and Improving Materials Processing Through Interpreting and Manipulating Predictive Models
,” MRS Proceedings
, Vol. 363
, Cambridge University Press
, Cambridge, UK
.10.1557/PROC-363-320.
Rashidi
, I.
, Mahian
, O.
, Lorenzini
, G.
, Biserni
, C.
, and Wongwises
, S.
, 2014
, “Natural Convection of Al2O3/Water Nanofluid in a Square Cavity: Effects of Heterogeneous Heating
,” Int. J. Heat Mass Transfer
, 74
, pp. 391
–402
.10.1016/j.ijheatmasstransfer.2014.03.03021.
Lorenzini
, G.
, and Rocha
, L. A. O.
, 2009
, “Geometric Optimization of T–Y-Shaped Cavity According to Constructal Design
,” Int. J. Heat Mass Transfer
, 52
(21–22
), pp. 4683
–4688
.10.1016/j.ijheatmasstransfer.2009.06.02022.
Hajmohammadi
, M. R.
, Eskandari
, H.
, Saffar-Avval
, M.
, and Campo
, A.
, 2013
, “A New Configuration of Bend Tubes for Compound Optimization of Heat and Fluid Flow
,” Energy
, 62
, pp. 418
–424
.10.1016/j.energy.2013.09.04623.
Hajmohammadi
, M. R.
, Poozesh
, S.
, Campo
, A.
, and Nourazar
, S. S.
, 2013
, “Valuable Reconsideration in the Constructal Design of Cavities
,” Energy Convers. Manage.
, 66
, pp. 33
–40
.10.1016/j.enconman.2012.09.03124.
Hajmohammadi
, M.
, Poozesh
, S.
, Salman Nourazar
, S.
, and Manesh
, A.
, 2013
, “Optimal Architecture of Heat Generating Pieces in a Fin
,” J. Mech. Sci. Technol.
, 27
(4
), pp. 1143
–1149
.10.1007/s12206-013-0217-525.
Hajmohammadi
, M.
, Rahmani
, M.
, Campo
, A.
, and Shariatzadeh
, O. J.
, 2014
, “Optimal Design of Unequal Heat Flux Elements for Optimized Heat Transfer Inside a Rectangular Duct
,” Energy
, 68
, pp. 609
–616
.10.1016/j.energy.2014.02.01126.
Hajmohammadi
, M.
, Abianeh
, V. A.
, Moezzinajafabadi
, M.
, and Daneshi
, M.
, 2013
, “Fork-Shaped Highly Conductive Pathways for Maximum Cooling in a Heat Generating Piece
,” Appl. Therm. Eng.
, 61
(2
), pp. 228
–235
.10.1016/j.applthermaleng.2013.08.00127.
Hajmohammadi
, M.
, Shariatzadeh
, O. J.
, Moulod
, M.
, and Nourazar
, S.
, 2014
, “Phi and Psi Shaped Conductive Routes for Improved Cooling in a Heat Generating Piece
,” Int. J. Therm. Sci.
, 77
, pp. 66
–74
.10.1016/j.ijthermalsci.2013.10.01528.
Bejan
, A.
, and Sciubba
, E.
, 1992
, “The Optimal Spacing of Parallel Plates Cooled by Forced Convection
,” Int. J. Heat Mass Transfer
, 35
(12
), pp. 3259
–3264
.10.1016/0017-9310(92)90213-C29.
Southwell
, R.
, Mendicino
, M.
, and Seebauer
, E.
, 1996
, “Optimization of Selective TiSi2 Chemical Vapor Deposition by Mechanistic Chemical Kinetics
,” J. Vac. Sci. Technol., A
, 14
(3
), pp. 928
–934
.10.1116/1.58041730.
Mouche
, M.-J.
, Mermet
, J.-L.
, Pires
, F.
, Richard
, E.
, Torres
, J.
, Palleau
, J.
, and Braud
, F.
, 1995
, “Process Optimization of Copper MOCVD Using Modeling Experimental Design
,” Appl. Surf. Sci
, 91
(1
), pp. 129
–133
.10.1016/0169-4332(95)00107-731.
Chiu
, W. K.
, Jaluria
, Y.
, and Glumac
, N. G.
, 2002
, “Control of Thin Film Growth in Chemical Vapor Deposition Manufacturing Systems: A Feasibility Study
,” ASME J. Manuf. Sci. Eng.
, 124
(3
), pp. 715
–724
.10.1115/1.146543432.
George
, P.
, Lin
, P. T.
, Gea
, H. C.
, and Jaluria
, Y.
, 2009
, “Reliability-Based Optimisation of Chemical Vapour Deposition Process
,” Int. J. Reliab. Saf.
, 3
(4
), pp. 363
–383
.10.1504/IJRS.2009.02858233.
George
, P.
, Gea
, H. C.
, and Jaluria
, Y.
, 2006
, “Optimization of Chemical Vapor Deposition Process
,” ASME
Paper No. DETC2006-99748.10.1115/DETC2006-9974834.
George
, P.
, Jaluria
, Y.
, and Gea
, H.
, 2006
, “Optimization of the Chemical Vapor Deposition Process for the Fabrication of Thin Films
,” International Heat Transfer Conference 13
, Sydney, Australia, Aug. 13–18.10.1615/IHTC13.p11.6035.
George
, P.
, Meng
, J.
, and Jaluria
, Y.
, 2014
, “Optimization of the Chemical Vapor Deposition Process for Gallium Nitride
,” International Heat Transfer Conference 15
, Kyoto, Japan, Aug. 10–15, Paper No. IHTC-15-8601.10.1615/IHTC15.mfp.00860136.
George
, P.
, 2007
, “Simulation and Optimization of the Chemical Vapor Deposition Process
,” Ph.D. thesis, Rutgers, The State University of New Jersey
, Piscataway, NJ
.37.
Morkoc
, H.
, Strite
, S.
, Gao
, G.
, Lin
, M.
, Sverdlov
, B.
, and Burns
, M.
, 1994
, “Large-Band-Gap SiC, III–V Nitride, and II–VI ZnSe-Based Semiconductor Device Technologies
,” J. Appl. Phys.
, 76
(3
), pp. 1363
–1398
.10.1063/1.35846338.
Mazumder
, S.
, and Lowry
, S. A.
, 2001
, “The Importance of Predicting Rate-Limited Growth for Accurate Modeling of Commercial MOCVD Reactors
,” J. Cryst. Growth
, 224
(1
), pp. 165
–174
.10.1016/S0022-0248(01)00813-239.
Safvi
, S.
, Redwing
, J.
, Tischler
, M.
, and Kuech
, T.
, 1997
, “GaN Growth by Metalorganic Vapor Phase Epitaxy a Comparison of Modeling and Experimental Measurements
,” J. Electrochem. Soc.
, 144
(5
), pp. 1789
–1796
.10.1149/1.183768140.
Wu
, B.
, Ma
, R.
, and Zhang
, H.
, 2003
, “Epitaxy Growth Kinetics of GaN Films
,” J. Cryst. Growth
, 250
(1
), pp. 14
–21
.10.1016/S0022-0248(02)02208-X41.
Theodoropoulos
, C.
, Mountziaris
, T.
, Moffat
, H.
, and Han
, J.
, 2000
, “Design of Gas Inlets for the Growth of Gallium Nitride by Metalorganic Vapor Phase Epitaxy
,” J. Cryst. Growth
, 217
(1
), pp. 65
–81
.10.1016/S0022-0248(00)00402-442.
Sengupta
, D.
, Mazumder
, S.
, Kuykendall
, W.
, and Lowry
, S. A.
, 2005
, “Combined Ab Initio Quantum Chemistry and Computational Fluid Dynamics Calculations for Prediction of Gallium Nitride Growth
,” J. Cryst. growth
, 279
(3
), pp. 369
–382
.10.1016/j.jcrysgro.2005.02.03643.
Meng
, J.
, and Jaluria
, Y.
, 2013
, “Numerical Simulation of GaN Growth in a Metalorganic Chemical Vapor Deposition Process
,” ASME J. Manuf. Sci. Eng.
, 135
(6
), p. 061013
.10.1115/1.402578144.
Kim
, C. S.
, Hong
, J.
, Shim
, J.
, Kim
, B. J.
, Kim
, H.-H.
, Sang
, D. Y.
, and Lee
, W. S.
, 2008
, “Numerical and Experimental Study on Metal Organic Vapor-Phase Epitaxy of InGaN/GaN Multi-Quantum-Wells
,” ASME J. Fluids Eng.
, 130
(8
), p. 081601
.10.1115/1.295651345.
Yakovlev
, E.
, Talalaev
, R.
, Makarov
, Y. N.
, Yavich
, B.
, and Wang
, W.
, 2004
, “Deposition Behavior of GaN in AIX 200/4 RF-S Horizontal Reactor
,” J. Cryst. Growth
, 261
(2
), pp. 182
–189
.10.1016/j.jcrysgro.2003.11.01046.
Kadinski
, L.
, Merai
, V.
, Parekh
, A.
, Ramer
, J.
, Armour
, E.
, Stall
, R.
, Gurary
, A.
, Galyukov
, A.
, and Makarov
, Y.
, 2004
, “Computational Analysis of GaN/InGaN Deposition in MOCVD Vertical Rotating Disk Reactors
,” J. Cryst. Growth
, 261
(2
), pp. 175
–181
.10.1016/j.jcrysgro.2003.11.08347.
Meng
, J.
, and Jaluria
, Y.
, 2013
, “Thermal Transport in the Gallium Nitride Chemical Vapor Deposition Process
,” ASME
Paper No. HT2013-17081.10.1115/HT2013-1708148.
George
, P.
, and Ogot
, M.
, 2005
, “A Compromise Method for the Design of Parametric Polynomial Surrogate Models
,” ASME
Paper No. DETC2005-85469.10.1115/DETC2005-8546949.
George
, P.
, and Ogot
, M. M.
, 2006
, “A Compromise Experimental Design Method for Parametric Polynomial Response Surface Approximations
,” J. Appl. Stat.
, 33
(10
), pp. 1037
–1050
.10.1080/0266476060074653350.
George
, P.
, 2004
, “Compromise Response Surface Method
,” Master's thesis, Rutgers, The State University of New Jersey
, Piscataway, NJ
.51.
Salinger
, A. G.
, Shadid
, J. N.
, A Hutchinson
, S.
, Hennigan
, G. L.
, Devine
, K. D.
, and Moffat
, H. K.
, 1999
, “Analysis of Gallium Arsenide Deposition in a Horizontal Chemical Vapor Deposition Reactor Using Massively Parallel Computations
,” J. Cryst. Growth
, 203
(4
), pp. 516
–533
.10.1016/S0022-0248(99)00140-252.
Chase
, M. W.
, 1998
, NIST-JANAF Thermochemical Tables
, 4th ed., National Institute of Standards and Technology
, Gaithersburg, MD
.53.
Atkinson
, A.
, and Donev
, A.
, 1992
, Optimum Experimental Designs
, Claredon Press
, New York
.54.
Dykstra
, O.
, 1971
, “The Augmentation of Experimental Data to Maximize |X'X|
,” Technometrics
, 13
(3
), pp. 682
–688
.10.1080/00401706.1971.1048883055.
Hebble
, T.
, and Mitchell
, T.
, 1972
, “Repairing Response Surface Designs
,” Technometrics
, 14
(3
), pp. 767
–779
.10.1080/00401706.1972.1048896556.
Mitchell
, T.
, 1968
, “Augmenting Response Surface Designs
,” Mathematics Division Annual Progress Report, Report No. ORNL-4385, Oak Ridge National Laboratory, Oak Ridge, TN, pp. 57
–60
.57.
Deb
, K.
, 2001
, “Multi-Objective Optimization
,” Multi-Objective Optimization Using Evolutionary Algorithms
, Wiley
, Chichester, UK
, pp. 13
–46
.58.
Hirako
, A.
, Kusakabe
, K.
, and Ohkawa
, K.
, 2005
, “Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor-Phase Epitaxy Using TMGa/NH3/H2 System: A Computational Fluid Dynamics Simulation Study
,” Jpn. J. Appl. Phys.
, 44
, pp. 874
–879
.10.1143/JJAP.44.874Copyright © 2015 by ASME
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