The thermal conductivity of silicon thin films is predicted in the directions parallel and perpendicular to the film surfaces (in-plane and out-of-plane, respectively) using equilibrium molecular dynamics, the Green-Kubo relation, and the Stillinger-Weber interatomic potential. Three different boundary conditions are considered along the film surfaces: frozen atoms, surface potential, and free boundaries. Film thicknesses range from and temperatures from . The relation between the bulk phonon mean free path and the film thickness spans from the ballistic regime at to the diffusive, bulk-like regime at . When the film is thin enough, the in-plane and out-of-plane thermal conductivity differ from each other and decrease with decreasing film thickness, as a consequence of the scattering of phonons with the film boundaries. The in-plane thermal conductivity follows the trend observed experimentally at . In the ballistic limit, in accordance with the kinetic and phonon radiative transfer theories, the predicted out-of-plane thermal conductivity varies linearly with the film thickness, and is temperature-independent for temperatures near or above the Debye’s temperature.
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November 2006
This article was originally published in
Journal of Heat Transfer
Research Papers
In-Plane and Out-Of-Plane Thermal Conductivity of Silicon Thin Films Predicted by Molecular Dynamics
Carlos J. Gomes,
Carlos J. Gomes
Graduate Student
Department of Mechanical Engineering and Institute for Complex Engineered Systems,
Carnegie Mellon University
, Pittsburgh, PA 15213-3890
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Marcela Madrid,
Marcela Madrid
Senior Scientific Specialist
Pittsburgh Supercomputing Center and Institute for Complex Engineered Systems,
Carnegie Mellon University
, Pittsburgh, PA 15213-3890
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Javier V. Goicochea,
Javier V. Goicochea
Graduate Student
Department of Mechanical Engineering and Institute for Complex Engineered Systems,
Carnegie Mellon University
, Pittsburgh, PA 15213-3890
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Cristina H. Amon
Cristina H. Amon
ASME Life Fellow
Raymond Lane Distinguished Professor, Department of Mechanical Engineering and Institute for Complex Engineered Systems,
e-mail: camon@cmu.edu
Carnegie Mellon University
, Pittsburgh, PA 15213-3890
Search for other works by this author on:
Carlos J. Gomes
Graduate Student
Department of Mechanical Engineering and Institute for Complex Engineered Systems,
Carnegie Mellon University
, Pittsburgh, PA 15213-3890
Marcela Madrid
Senior Scientific Specialist
Pittsburgh Supercomputing Center and Institute for Complex Engineered Systems,
Carnegie Mellon University
, Pittsburgh, PA 15213-3890
Javier V. Goicochea
Graduate Student
Department of Mechanical Engineering and Institute for Complex Engineered Systems,
Carnegie Mellon University
, Pittsburgh, PA 15213-3890
Cristina H. Amon
ASME Life Fellow
Raymond Lane Distinguished Professor, Department of Mechanical Engineering and Institute for Complex Engineered Systems,
Carnegie Mellon University
, Pittsburgh, PA 15213-3890e-mail: camon@cmu.edu
J. Heat Transfer. Nov 2006, 128(11): 1114-1121 (8 pages)
Published Online: April 6, 2006
Article history
Received:
June 22, 2005
Revised:
April 6, 2006
Citation
Gomes, C. J., Madrid, M., Goicochea, J. V., and Amon, C. H. (April 6, 2006). "In-Plane and Out-Of-Plane Thermal Conductivity of Silicon Thin Films Predicted by Molecular Dynamics." ASME. J. Heat Transfer. November 2006; 128(11): 1114–1121. https://doi.org/10.1115/1.2352781
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