A critical current density, a criterion of electromigration (EM) resistance in interconnects, above which EM damages initiate has been studied to minimize EM damages of interconnects. In general, the assessment of a critical current density is confined to straight interconnect called as Blech specimen, although the critical current density is sensitive to structural characteristic. This work proposes a procedure of predicting a critical current density for any arbitrary-configuration interconnect by using the analogy between atomic density and electrical potential. In the models of straight and barrel interconnects as the typical solder bumps in modern flip-chip technology, the critical current density is predicted through calculating electrical potential by proposed formulation and simulation based on the finite element analysis (FEA). The critical current density for straight interconnect obtained by experiment leads to numerically calculate the critical electrical potential, which is independent of interconnect configuration. The critical potential corresponds to the critical atomic density, below which the accumulation of atoms allows. The calculated critical electrical potential determines a critical current density for arbitrary-configuration interconnect including current crowding effect. This finding can predict a critical current density for actual arbitrary-configuration model and provide an insight for the applying to the packaging design such as ball grid array and C4 flip-chip solder bumps.
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June 2019
Research-Article
Prediction of Electromigration Critical Current Density in Passivated Arbitrary-Configuration Interconnect
Yasuhiro Kimura,
Yasuhiro Kimura
Department of Finemechanics,
Graduate School of Engineering,
Tohoku University,
Aoba 6-6-01, Aramaki,
Aoba-ku, Sendai 980-8579, Japan
e-mail: kimura@ism.mech.tohoku.ac.jp
Graduate School of Engineering,
Tohoku University,
Aoba 6-6-01, Aramaki,
Aoba-ku, Sendai 980-8579, Japan
e-mail: kimura@ism.mech.tohoku.ac.jp
1Corresponding author.
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Masumi Saka
Masumi Saka
Department of Finemechanics,
Graduate School of Engineering,
Tohoku University,
Aoba 6-6-01, Aramaki,
Aoba-ku, Sendai 980-8579, Japan
Graduate School of Engineering,
Tohoku University,
Aoba 6-6-01, Aramaki,
Aoba-ku, Sendai 980-8579, Japan
Search for other works by this author on:
Yasuhiro Kimura
Department of Finemechanics,
Graduate School of Engineering,
Tohoku University,
Aoba 6-6-01, Aramaki,
Aoba-ku, Sendai 980-8579, Japan
e-mail: kimura@ism.mech.tohoku.ac.jp
Graduate School of Engineering,
Tohoku University,
Aoba 6-6-01, Aramaki,
Aoba-ku, Sendai 980-8579, Japan
e-mail: kimura@ism.mech.tohoku.ac.jp
Masumi Saka
Department of Finemechanics,
Graduate School of Engineering,
Tohoku University,
Aoba 6-6-01, Aramaki,
Aoba-ku, Sendai 980-8579, Japan
Graduate School of Engineering,
Tohoku University,
Aoba 6-6-01, Aramaki,
Aoba-ku, Sendai 980-8579, Japan
1Corresponding author.
Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received September 5, 2018; final manuscript received February 11, 2019; published online April 10, 2019. Assoc. Editor: Ankur Jain.
J. Electron. Packag. Jun 2019, 141(2): 021008 (7 pages)
Published Online: April 10, 2019
Article history
Received:
September 5, 2018
Revised:
February 11, 2019
Citation
Kimura, Y., and Saka, M. (April 10, 2019). "Prediction of Electromigration Critical Current Density in Passivated Arbitrary-Configuration Interconnect." ASME. J. Electron. Packag. June 2019; 141(2): 021008. https://doi.org/10.1115/1.4042980
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