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Research Papers

Selective Band Gap to Suppress the Spurious Acoustic Mode in Film Bulk Acoustic Resonator Structures

[+] Author and Article Information
Rafik Serhane, Fayçal Hadj-Larbi

Centre for Development of
Advanced Technologies,
Cité 20 Août 1956,
Baba Hassen, BP. 17,
Algiers DZ-16303, Algeria

Abdelkader Hassein-Bey

Micro & Nano Physics Group,
Faculty of Sciences,
University Saad Dahlab of Blida (USDB),
BP. 270,
Blida DZ-09000, Algeria

Abdelkrim Khelif

Institut FEMTO-ST, CNRS,
Université de Bourgogne Franche-Comté,
Besançon Cedex 25044, France

Contributed by the Technical Committee on Vibration and Sound of ASME for publication in the JOURNAL OF VIBRATION AND ACOUSTICS. Manuscript received January 4, 2017; final manuscript received December 10, 2017; published online February 22, 2018. Assoc. Editor: Mahmoud Hussein.

J. Vib. Acoust 140(3), 031018 (Feb 22, 2018) (7 pages) Paper No: VIB-17-1007; doi: 10.1115/1.4038944 History: Received January 04, 2017; Revised December 10, 2017

In this work, we investigate numerically the propagation of Lamb waves in a film bulk acoustic resonator (FBAR) structure formed by piezoelectric ZnO layer sandwiched between two Mo electrodes coupled with Bragg reflectors; the system is thus considered as a phononic-crystal (PnC) plate. The aim is to suppress the first-order symmetric Lamb wave mode considered as a spurious mode caused by the establishment of a lateral standing wave due to the reflection at the embedded lateral extremities of the structure; this spurious mode is superposing to the main longitudinal mode resonance of the FBAR. The finite element study, using harmonic and eigen-frequency analyses, is performed on the section of FBAR structure coupled with the PnC. In the presence of PnC, the simulation results show the evidence of a selective band gap where the parasitic mode is prohibited. The quality factor of the FBAR is enhanced by the introduction of the PnC. Indeed, the resonance and antiresonance frequencies passed from 1000 and 980 (without PnC) to 2350 and 1230 (with PnC), respectively. This is accompanied by a decrease in the electromechanical coupling coefficient from 10.60% to 6.61%.

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Figures

Grahic Jump Location
Fig. 4

Dispersion relations of waves in the FBAR unit cell without PnC

Grahic Jump Location
Fig. 3

TE1, TS0 and TS2 Lamb modes vibration profiles

Grahic Jump Location
Fig. 2

Electromechanical response of the FBAR structure: (a) Electrical input admittance |Y11|(f), (b) normal mechanical displacement uz(f,x), and (c) the spectrum Uz(f,kx))

Grahic Jump Location
Fig. 1

Proposed FBAR structure with PnC grid

Grahic Jump Location
Fig. 5

Dispersion relations of waves in the FBAR unit cell with PnC

Grahic Jump Location
Fig. 6

Comparison between the two dispersion relations of FBAR structures: (a) without PnC and (b) with PnC

Grahic Jump Location
Fig. 7

Comparison between the two calculated input admittances of the FBAR structures, without PnC and with PnC

Grahic Jump Location
Fig. 8

Comparison between the two calculated quality factors, without PnC and with PnC

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