Research Papers

Band Gaps in Three-Dimensional Layer-by-Layer Phononic Crystal

[+] Author and Article Information
N. Aravantinos-Zafiris

e-mail: naravadinos@upatras.gr

M. M. Sigalas

e-mail: sigalas@upatras.gr
Department of Materials Science,
University of Patras,
Patras 26504, Greece

Contributed by the Design Engineering Division of ASME for publication in the JOURNAL OF VIBRATION AND ACOUSTICS. Manuscript received April 30, 2012; final manuscript received January 18, 2013; published online June 6, 2013. Assoc. Editor: Mahmoud Hussein.

J. Vib. Acoust 135(4), 041003 (Jun 06, 2013) (5 pages) Paper No: VIB-12-1128; doi: 10.1115/1.4023825 History: Received April 30, 2012; Revised January 18, 2013

In this work, we numerically investigate the existence of phononic band gaps in the layer-by-layer rods structure. For the numerical calculations the finite difference time domain method was used and the transmission, as well as the band structure (using periodic boundary conditions and the Bloch theorem), was calculated. Several different materials (considered as the rods materials) were examined and the effects of all the geometric parameters of the structure were also numerically investigated. The results show that this structure seems to have very promising features as a phononic crystal giving, under certain conditions, a full 3D band gap. Taking into account that it is already known for its use as a photonic crystal, a certain belief for its use simultaneously as a photonic and phononic crystal rises.

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Grahic Jump Location
Fig. 1

The layer-by-layer structure (figure taken from Ref. [20])

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Fig. 4

The band structure of the silicon layer-by-layer phononic crystal (d = 1 μm, c/d = 40/30, and w/d = 11/30) along the three directions. The x axis includes the normalized k-vectors along each direction. (a) In-plane direction y, (b) stacking direction z, and (c) diagonal direction between y and z directions, respectively. Additionally all the components of the field are shown in every figure. The solid line is for the component along the z axis (stacking direction), the dashed line is for the component along the x axis, and the dotted line is along the y axis.

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Fig. 3

Transmission spectrum of the silicon layer-by-layer rods structure (d = 1 μm, c/d = 40/30, and w/d = 11/30) for the three different components of the input field. x-component (dotted line), y-component (dashed line), and z-component (solid line).

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Fig. 2

The fast Fourier transform of the y component of the field for normalized k vector along the z direction for the highest k vector value (k = 0.5)




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